IXFH26N55Q データシート PDFこの部品の機能は「Power Mosfets」です。 |
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部品番号 |
IXFH26N55Q Power MOSFETs Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 26N55Q IXFT 26N55Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 RDS(on) = 550 V = 26 A = 0.23 Ω IXYS |
文字列「 IXFH26N55 」「 26N55Q 」で始まる検索結果です。 |
部品説明 |
222265553272 (22226555xxx) Miniature Ceramic Plate Capacitors Yageo |
22226555xxxx (22226555xxx) Miniature Ceramic Plate Capacitors Yageo |
2SC2655 Silicon NPN Epitaxial Type TRANSISTOR 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 Toshiba Semiconductor |
2SC2655 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS UNISONIC TECHNOLOGIES CO., LTD 2SC2655 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0µs (Typ.) NPN SILICON TRANSISTOR 1 TO-92NL *Pb-free plating product number: 2SC2655L ORD Unisonic Technologies |
2SC2655 NPN General Purpose Transistors 2SC2655 NPN General Purpose Transistors P b Lead(Pb)-Free 2 3 1.EMITTER 3.BASE 2.COLLECTOR 1 TO-92MOD ELECTRICAL CHARACTERISTICS£¨ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter c Weitron |
2SC2655 NPN Plastic Encapsulated Transistor 2SC2655 Elektronische Bauelemente 2A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92MOD A D Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) High speed switching time:tstg=1μs( SeCoS |
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