Datasheet IXFH22N55 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFH22N55	HiPerFET Power MOSFET HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1	IXYS

IXFH22 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFH22N65X2	Power MOSFET ( Transistor ) X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150�	IXYS
IXFH22N60P3	Power MOSFET ( Transistor ) Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 VDSS ID25 RDS(on) = 600V = 22A ≤ 360mΩ TO-220AB (IXFP) G DS Tab TO-3P (IXFQ) Symbol VDSS VDGR VGSS	IXYS Corporation
IXFH22N50P	PolarHV HiPerFET Power MOSFET Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 22N50P IXFV 22N50P IXFV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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