IXFH16N90Q データシート PDFこの部品の機能は「Hiperfet Power Mosfets Q-class」です。 |
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部品番号 |
IXFH16N90Q HiPerFET Power MOSFETs Q-Class Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q VDSS = 900 V = 16 A ID25 RDS(on) = IXYS Corporation |
文字列「 IXFH16N90 」「 16N90Q 」で始まる検索結果です。 |
部品説明 |
IXFH16N90 HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = IXYS |
1690 UHF Prescaler Type D F-F Motorola Semiconductors |
2SB1690 Transistors Transistors 2SB1690 General purpose amplification(−12V, −2A) 2SB1690 zApplications Low frequency amplifier Deiver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −180mV at IC= −1A / IB= −50mA zPackaging specificati ROHM Semiconductor |
2SB1690K Transistors Transistors 2SB1690K General purpose amplification(−12V, −2A) 2SB1690K zApplications Low frequency amplifier Deiver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −180mV at IC= −1A / IB= −50mA zExternal dimensions (U ROHM Semiconductor |
2SK1690 N-Channel Silicon MOSFET Ordering number:EN4223 Features · Low ON resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1690 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1690] 10.2 4.5 1.3 11.5 1.6 0.9 11.0 8.8 unit:mm 2090A 20.9 9.4 1.2 0.8 123 2. Sanyo Semicon Device |
AN16903A IC for sound multiplex demodulation DATA SHEET Part No. Package Code No. AN16903A SSOP024-P-0300E Publication date: May 2007 SDB00150AEB 1 AN16903A Contents Overview Features Package ………………………………………………….……..…………………………� Panasonic Semiconductor |
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