Datasheet IXFH16N50P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFH16N50P	Polar MOSFETs Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS(on) trr = 500 V = 16 A = 400 mΩ = 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ =	IXYS Corporation

IXFH16N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFH16N90	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ =	IXYS
IXFH16N90Q	HiPerFET Power MOSFETs Q-Class Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q VDSS = 900 V = 16 A ID25 RDS(on) = 0.65 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD T	IXYS Corporation
IXFH16N80P	PolarHV Power MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS VDSS = 800 V ID25 = 16 A RDS(on) ≤ 600 mΩ ≤ 250 ns trr TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt Test Condition	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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