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IXFH15N80Q PDF Datasheet

The IXFH15N80Q is Hiperfet Power MOSFETs Q-class. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IXFH15N80Q
HiPerFET Power MOSFETs Q-Class

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS(on) = = = 800 V 15 A 0.60 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pu

IXYS Corporation
IXYS Corporation
pdf

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Part No Description ( Function) Manufacturers PDF
IXFH15N80   HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 RDS(on) 0.70 W 0.60 W 800 V 14 A 800 V 15 A trr £ 250 ns Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 1

IXYS Corporation
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2SA1580   PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features · High fT. · Small reverse transfer capacitance. · Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580/2SC4104] ( ) : 2SA15

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2SA1580   Transistor

SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistor 2SA1580 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High fT. +0.1 2.4-0.1 Small reverse transfer capacitance. Adoption of FBET process. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0

Kexin
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2SA1580   Transistor

Product specification 2SA1580 SOT-23 Unit: mm High fT. +0.1 2.4-0.1 Small reverse transfer capacitance. Adoption of FBET process. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter

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2SB1580   Power Transistor ( 100V /2A)

2SB1580 / 2SB1316 / 2SB1567 Transistors Power Transistor (−100V , −2A) 2SB1580 / 2SB1316 / 2SB1567 !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980 / 2SD

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