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Datasheet IXFH15N100 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IXFH15N100 | HiPerFET Power MOSFETs
HiPerFETTM Power MOSFETs
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt P |
 IXYS |
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| 3 | IXFH15N100P | Polar Power MOSFET HiPerFET PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH15N100P IXFV15N100P IXFV15N100PS
VDSS ID25
RDS(on) trr
= = ≤ ≤
1000V 15A 760mΩ 300ns
PLUS220 (IXFV)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
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 IXYS Corporation |
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| 2 | IXFH15N100Q | HiPerFET Power MOSFETs Q-Class
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C |
IXYS Corporation |
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| 1 | IXFH15N100Q3 | Power MOSFET ( Transistor ) www.DataSheet.co.kr
Advance Technical Information
HiperFETTM Power MOSFETs Q3-Class
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT15N100Q3 IXFH15N100Q3
VDSS ID25
RDS(on) trr
= 1000V = 15A ≤ 1.05Ω ≤ 250ns
TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C |
IXYS Corporation |
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