IXBT10N170 データシート PDFこの部品の機能は「High Voltage/ High Gain Bimosfettm MonolithIC Bipolar Mos Transistor」です。 |
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部品番号 |
IXBT10N170 High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor www.Datasheet.jp High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCG IXYS Corporation |
文字列「 IXBT10N170 」「 10N170 」で始まる検索結果です。 |
部品説明 |
C3D10170H Silicon Carbide Schottky Diode www.datasheet.jp C3D10170H–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = IF; TC<135˚C 1700 V = 14.4 A 96 nC Qc = Package • • • • • • • 1700-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery V Cree |
IXBH10N170 High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25° IXYS Corporation |
IXGH10N170 High Voltage IGBT High Voltage IGBT IXGH10N170 IXGT10N170 VCES = IC90 = VCE(sat) ≤ 1700V 10A 4.0V TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient IXYS |
IXGH10N170A High Voltage IGBT High Voltage IGBT Preliminary Data Sheet IXGH 10N170A IXGT 10N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 10 A = 6.0 V = 35 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M� IXYS |
IXGT10N170 High Voltage IGBT High Voltage IGBT IXGH10N170 IXGT10N170 VCES = IC90 = VCE(sat) ≤ 1700V 10A 4.0V TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient IXYS |
IXGT10N170A High Voltage IGBT High Voltage IGBT Preliminary Data Sheet IXGH 10N170A IXGT 10N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 10 A = 6.0 V = 35 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M� IXYS |
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