Datasheet IXBH42N170A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXBH42N170A	(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 42N170A IXBT 42N170A VCES IC25 VCE(sat) tfi = 1700 = 42 = 6.0 = 50 V A V ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C	IXYS Corporation

IXBH42N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXBH42N170	(IXBH42N170 / IXBT42N170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 42N170 IXBT 42N170 VCES = 1700 V = 75 A IC25 VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C	IXYS Corporation
IXBH42N170A	(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 42N170A IXBT 42N170A VCES IC25 VCE(sat) tfi = 1700 = 42 = 6.0 = 50 V A V ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg Test Conditions	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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