|
|
Datasheet IXBH16N170 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXBH16N170 | BIMOSFET Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH16N170 IXBT16N170
VCES = IC90 = VCE(sat) ≤
1700V 16A 3.3V
Symbol
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TTLSOLD Md
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Conti |
 IXYS |
 |
| 1 | IXBH16N170A | High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor Advanced Technical Information
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 16N170A IXBT 16N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 16 A = 6.0 V = 50 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C |
 IXYS Corporation |
|
| Esta página es del resultado de búsqueda del IXBH16N170. Si pulsa el resultado de búsqueda de IXBH16N170 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |