Datasheet IXBH15N160 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXBH15N160	(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8 V typ. 40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES V	IXYS Corporation

IXBH15N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXBH15N160	(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8 V typ. 40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C	IXYS Corporation
IXBH15N140	(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8 V typ. 40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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