Datasheet IS42RM32160E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IS42RM32160E	4M x 32Bits x 4Banks Mobile Synchronous DRAM IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edg	ISSI

IS42RM321 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IS42RM32160E	4M x 32Bits x 4Banks Mobile Synchronous DRAM IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenc	ISSI
IS42RM32160C	512Mb Mobile Synchronous DRAM IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM NOVEMBER 2010 FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst L	ISSI
IS42RM32100D	512K x 32Bits x 2Banks Low Power Synchronous DRAM IS42/45SM/RM/VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are refer	ISSI

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Número de pieza	Descripción	Fabricantes	PDF
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