IS28F400BLV データシート PDFこの部品の機能は「256k X 16 / 512k X 8 Cmos」です。 |
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部品番号 |
IS28F400BLV 256K X 16 / 512K X 8 CMOS ISSI |
文字列「 IS28F400 」「 28F400BLV 」で始まる検索結果です。 |
部品説明 |
IS28F400BV 256K X 16 / 512K X 8 CMOS ISSI |
BQ28400 Tablet PC and Netbook 2-Series Cell Li-Ion Battery Gas Gauge and Protection (Rev. A) Texas Instruments |
CY28400 100-MHz Differential Buffer for PCI Express and SATA CY28400 100-MHz Differential Buffer for PCI Express and SATA Features • CK409 or CK410 companion buffer • Four differential 0.7v clock pairs • Individual OE controls • Low CTC jitter (< 50 ps) • Programmable bandwidth • SRC_STOP# power management control • SMBus Bl Cypress Semiconductor |
HY628400 512K x 8bit CMOS SRAM HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circui Hynix Semiconductor |
HY628400A 512K x8 bit 5.0V Low Power CMOS slow SRAM HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 04 05 06 History Revision History Insert Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Par Hynix Semiconductor |
HY628400A-LLT2-55 512K x8 bit 5.0V Low Power CMOS slow SRAM HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 04 05 06 History Revision History Insert Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Par Hynix Semiconductor |
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