| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | IRS2113SPBF | (IRS2110 / IRS2113) HIGH AND LOW SIDE DRIVER Data Sheet No. PD60249 IRS2110(-1,-2,S)PbF IRS2113(-1,-2,S)PbF Features HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Product Summary • Fully operational to +500 V or +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V VOFFSET (IRS2110) (IRS2113) 500 V max. 600 V max. • Underv |
 International Rectifier |
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Recommended search results related to IRS2113SPBF |
| Part No | Description ( Function) | Manufacturers | |
| IRS2113-1PBF | HIGH AND LOW SIDE DRIVER Data Sheet No. PD60249 IRS2110(-1,-2,S)PbF IRS2113(-1,-2,S)PbF Features HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Product Summary • Fully operational to +500 V or +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate |
International Rectifier |
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| IRS2113-2PBF | HIGH AND LOW SIDE DRIVER Data Sheet No. PD60249 IRS2110(-1,-2,S)PbF IRS2113(-1,-2,S)PbF Features HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Product Summary • Fully operational to +500 V or +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate |
International Rectifier |
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| IRS2113PBF | (IRS2110 / IRS2113) HIGH AND LOW SIDE DRIVER Data Sheet No. PD60249 IRS2110(-1,-2,S)PbF IRS2113(-1,-2,S)PbF Features HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Product Summary • Fully operational to +500 V or +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate |
International Rectifier |
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| 2SA2113 | Medium power transistor ( 30V/2A) 2SA2113 Transistor Medium power transistor (−30V, −2A) 2SA2113 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1A, IB = −0.1A) 3) Strong discharge power for inductive load and capacitance |
 ROHM Semiconductor |
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| 2SD2113 | Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2113 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Cur |
 Inchange Semiconductor |
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List of most widely used semiconductors
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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