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Datasheet IRLZ34N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRLZ34N | 55V Single N-channel HexFET Power MOSFET in a TO-220AB Package
PD - 9.1307B
IRLZ34N
HEXFET® Power MOSFET
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.035Ω ID = 30A
Description
Fifth Generation HEXFET |
 International Rectifier |
 |
| 6 | IRLZ34N | N-channel Enhancement Mode Logic Level Trenchmos (tm) Transistor
Philips Semiconductors
Product specification
N-channel enhancement mode Logic level TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low |
 NXP Semiconductors |
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| 5 | IRLZ34NL | 55V Single N-channel HexFET Power MOSFET in a TO-262 Package
PD - 91308A
IRLZ34NS/L
l
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.0 |
International Rectifier |
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| 4 | IRLZ34NLPBF | (IRLZ34NSPBF / IRLZ34NLPBF) Power MOSFET
l l
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
HEXFET Power MOSFET
D
IRLZ34NSPbF IRLZ34NLPbF ®
VDSS = 55V |
International Rectifier |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
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