IRLZ34L データシート PDFこの部品の機能は「Hexfet Power Mosfet」です。 |
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部品番号 |
IRLZ34L Power MOSFET ( Transistor ) IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 5 V 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single 0.05 I2 Vishay |
IRLZ34L HEXFET Power MOSFET PD - 9.905A IRLZ34S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avala International Rectifier |
文字列「 IRLZ34 」「 34L 」で始まる検索結果です。 |
部品説明 |
IRLZ34 HEXFET POWER MOSFET
International Rectifier |
IRLZ34 Power MOSFET ( Transistor ) Power MOSFET IRLZ34, SiHLZ34 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 60 VGS = 5.0 V 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single 0.050 D TO-220AB S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Vishay |
IRLZ34N 55V Single N-channel HexFET Power MOSFET in a TO-220AB Package PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.035Ω ID = 30A Description Fif International Rectifier |
IRLZ34N N-channel Enhancement Mode Logic Level Trenchmos (tm) Transistor Philips Semiconductors Product specification N-channel enhancement mode Logic level TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The devi NXP Semiconductors |
IRLZ34NL 55V Single N-channel HexFET Power MOSFET in a TO-262 Package PD - 91308A IRLZ34NS/L l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET® Power MOSFET D VDSS International Rectifier |
IRLZ34NLPBF (IRLZ34NSPBF / IRLZ34NLPBF) Power MOSFET l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET D IRLZ34NSPbF IRLZ34 International Rectifier |
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