IRLR3110ZPBF データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
検索結果を表示する |
部品番号 |
IRLR3110ZPBF Power MOSFET ( Transistor ) Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Indust International Rectifier |
文字列「 IRLR3110 」「 3110ZPBF 」で始まる検索結果です。 |
部品説明 |
1N3110 Diode (spec sheet) American Microsemiconductor |
1N3110 GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
2N3110 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics |
2N3110 (2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches
Micro Electronics |
2N3110 Bipolar NPN Device 2N3110 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.0 Seme LAB |
2N3110 (2N3108 / 2N3110) General Purpose Amplifier And Switches NPN 2N3108 – 2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES C The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Value 2N3108 60 ww Comset Semiconductor |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |