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Datasheet IRLR210 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRLR210 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRLR210
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.)
BVDSS = 200 V RDS(o |
 Fairchild Semiconductor |
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| 1 | IRLR210A | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRLR/U210A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.)
BVDSS = 200 V RD |
Fairchild Semiconductor |
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