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Datasheet IRLR120N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRLR120N | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRLR120N
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)
BVDSS = 100 V RDS( |
 Fairchild Semiconductor |
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| 3 | IRLR120N | N-channel power MOSFET / 100V / 10A PD - 91541B
IRLR/U120N
HEXFET® Power MOSFET
l l l l l
Surface Mount (IRLR120N) Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = 100V
G S
RDS(on) = 0.185Ω ID = 10A
Description
Fifth Generation HEXFETs from International Rectifier utilize adva |
 TRF |
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| 2 | IRLR120N | Power MOSFET ( Transistor ) l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This b |
 International Rectifier |
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| 1 | IRLR120NPBF | Power MOSFET ( Transistor ) IRLR120NPbF IRLU120NPbF
l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated
l Lead-Free
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on |
International Rectifier |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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