IRL2910PBF データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
検索結果を表示する |
部品番号 |
IRL2910PBF Power MOSFET ( Transistor ) • Lead-Free PD - 94993 IRL2910PbF www.irf.com 1 2/10/04 IRL2910PbF 2 www.irf.com IRL2910PbF www.irf.com 3 IRL2910PbF 4 www.irf.com IRL2910PbF www.irf.com 5 IRL2910PbF 6 www.irf.com IRL2 International Rectifier |
文字列「 IRL2910 」「 2910PBF 」で始まる検索結果です。 |
部品説明 |
IRL2910 HEXFET Power MOSFET PD - 91375B IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 100V RDS(on) = 0.026Ω G ID = 55A S International Rectifier |
IRL2910LPbF HEXFET Power MOSFET PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advance International Rectifier |
IRL2910SPbF HEXFET Power MOSFET PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advance International Rectifier |
29102BJA 2K x 8 CMOS RAM HM-6516 March 1997 2K x 8 CMOS RAM Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques Intersil |
29103BRA 16K x 1 Asynchronous CMOS Static RAM HM-65262 March 1997 16K x 1 Asynchronous CMOS Static RAM Description The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle times and ease of use. Th Intersil |
29104BJA 2K x 8 Asynchronous CMOS Static RAM HM-65162 March 1997 2K x 8 Asynchronous CMOS Static RAM Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinou Intersil |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |