データシート PDF 検索 - DataSheet.jp

IRL2910PBF データシート PDF

この部品の機能は「Power Mosfet ( Transistor )」です。


検索結果を表示する

部品番号
IRL2910PBF

Power MOSFET ( Transistor )


• Lead-Free PD - 94993 IRL2910PbF www.irf.com 1 2/10/04 IRL2910PbF 2 www.irf.com IRL2910PbF www.irf.com 3 IRL2910PbF 4 www.irf.com IRL2910PbF www.irf.com 5 IRL2910PbF 6 www.irf.com IRL2


International Rectifier
International Rectifier

データシート pdf



文字列「 IRL2910 」「 2910PBF 」で始まる検索結果です。

部品説明

IRL2910

HEXFET Power MOSFET

PD - 91375B IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 100V RDS(on) = 0.026Ω G ID = 55A S

International Rectifier
International Rectifier

 データシート pdf


IRL2910LPbF

HEXFET Power MOSFET

PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advance

International Rectifier
International Rectifier

 データシート pdf


IRL2910SPbF

HEXFET Power MOSFET

PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advance

International Rectifier
International Rectifier

 データシート pdf


29102BJA

2K x 8 CMOS RAM

HM-6516 March 1997 2K x 8 CMOS RAM Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques

Intersil
Intersil

 データシート pdf


29103BRA

16K x 1 Asynchronous CMOS Static RAM

HM-65262 March 1997 16K x 1 Asynchronous CMOS Static RAM Description The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle times and ease of use. Th

Intersil
Intersil

 データシート pdf


29104BJA

2K x 8 Asynchronous CMOS Static RAM

HM-65162 March 1997 2K x 8 Asynchronous CMOS Static RAM Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinou

Intersil
Intersil

 データシート pdf

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