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Datasheet IRL2505 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | IRL2505 | Power MOSFET ( Transistor ) l Logic-Level Gate Drive
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr |
International Rectifier |
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5 | IRL2505L | Power MOSFET ( Transistor )
PD - 91326D
IRL2505S/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.00 |
International Rectifier |
|
4 | IRL2505LPBF | HEXFET Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET Power MOSFET
D
IRL2505LPbF IRL2505SPbF ®
VDSS = 55V R |
International Rectifier |
|
3 | IRL2505PBF | HEXFET Power MOSFET l Logic-Level Gate Drive
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
l Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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