IRHF53230 データシート PDFこの部品の機能は「(irhf5x230) Radiation Gardened Power Mosfet Thru-hole (to-39)」です。 |
検索結果を表示する |
部品番号 |
IRHF53230 (IRHF5x230) RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) www.Datasheet.jp PD - 93788A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF57230 100K Rads (Si) IRHF53230 300K Rads (Si) IRHF54230 IRHF58230 60 International Rectifier |
文字列「 IRHF53230 」「 53230 」で始まる検索結果です。 |
部品説明 |
IRHNJ53230 (IRHNJ5x230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si) RDS(on) 0.20Ω 0.20Ω 0.20Ω 0.25Ω I International Rectifier |
IRHY53230CM RADIATION HARDENED POWER MOSFET THRU-HOLE PD - 93827A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level IRHY57230CM 100K Rads (Si) IRHY53230CM 300K Rads (Si) IRHY54230CM 600K Rads (Si) IRHY58230CM 1000K Rads (Si) RDS(on) 0.21Ω 0.21Ω 0.21Ω 0.26Ω International Rectifier |
M53230224CE2 (M53230224CE2/CJ2) DRAM Module DRAM MODULE M53230224CE2/CJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42- Samsung Semiconductor |
M53230224CJ2 (M53230224CE2/CJ2) DRAM Module DRAM MODULE M53230224CE2/CJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42- Samsung Semiconductor |
M53230224DE2 (M53230224DE2/DJ2) DRAM Module DRAM MODULE M53230224DE2/DJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42- Samsung Semiconductor |
M53230224DJ2 (M53230224DE2/DJ2) DRAM Module DRAM MODULE M53230224DE2/DJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42- Samsung Semiconductor |
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