IRGSL6B60KDPBF データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor」です。 |
検索結果を表示する |
部品番号 |
IRGSL6B60KDPBF Insulated Gate Bipolar Transistor PD - 95229C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. International Rectifier |
文字列「 IRGSL6B60 」「 6B60KDPBF 」で始まる検索結果です。 |
部品説明 |
IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = International Rectifier |
IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.0A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Cap International Rectifier |
IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR PD - 95229 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.0A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit C International Rectifier |
IRGSL6B60KPbF Insulated Gate Bipolar Transistor INSULATED GATE BIPOLAR TRANSISTOR PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Be International Rectifier |
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