IRGSL30B60K データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor」です。 |
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部品番号 |
IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low VCE (on) Non Punch Through IGBT Techno International Rectifier |
文字列「 IRGSL30B60 」「 30B60K 」で始まる検索結果です。 |
部品説明 |
IRGSL30B60KPbF Insulated Gate Bipolar Transistor PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Features • Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperatur International Rectifier |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
0230600L Silicon Controlled Rectifier Microsemi Corporation |
1SCA022770R3060 neutral and earth terminals
ABB |
2SB183060MA LOW IR SCHOTTKY BARRIER DIODE CHIPS 2SB183060MA 2SB183060MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB183060MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Low power losses, high efficiency; High ESD capability; High surge capability; Guard ring constructi Silan |
2SC3060 (2SC3178 / 2SC3059 - 2SC3061) Silicon High Speed Power Transistor This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manu Fujitsu Media Devices |
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