IRGR3B60KD2 データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor」です。 |
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部品番号 |
IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit International Rectifier |
文字列「 IRGR3B60KD2 」「 3B60KD2 」で始まる検索結果です。 |
部品説明 |
IRGR3B60KD2PBF Insulated Gate Bipolar Transistor PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristi International Rectifier |
1N3602 Diode (spec sheet) American Microsemiconductor |
2SK3602-01 N-CHANNEL SILICON POWER MOSFET 2SK3602-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible P Fuji Electric |
5962-0623602QPC (5962-0623601QPC / 5962-0623602QPC) 670MHz Low Noise Amplifiers ® 5962-0623601QPC, 5962-0623602QPC Data Sheet March 28, 2007 FN6473.0 670MHz Low Noise Amplifiers The 5962-0623601QPC and 5962-0623602QPC are fully DSCC SMD compliant parts and the SMD data sheets are available on the DSCC website (http://www.dscc.dla.mil/ programs/specfind/de Intersil Corporation |
8403602JA 2K x 8 Asynchronous CMOS Static RAM HM-65162 March 1997 2K x 8 Asynchronous CMOS Static RAM Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinou Intersil Corporation |
8403602ZA 2K x 8 Asynchronous CMOS Static RAM HM-65162 March 1997 2K x 8 Asynchronous CMOS Static RAM Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinou Intersil Corporation |
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