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Datasheet IRG7PH35UD1-EP Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | IRG7PH35UD1-EP | INSULATED GATE BIPOLAR TRANSISTOR PD - 97455
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH35UD1PbF IRG7PH35UD1-EP
VCES = 1200V I NOMINAL = 20A
Features
• • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA |
 International Rectifier |
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IRG7PH35UD1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| IRG7PH35UD1PbF | INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
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| IRG7PH35UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
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| IRG7PH35UD1-EP | INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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