IRG7PH35U-EP データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor」です。 |
検索結果を表示する |
部品番号 |
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% o International Rectifier |
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier |
文字列「 IRG7PH35 」「 7PH35U 」で始まる検索結果です。 |
部品説明 |
IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast International Rectifier |
IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features • • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching International Rectifier |
IRG7PH35UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitiv International Rectifier |
IRG7PH35UD1PbF INSULATED GATE BIPOLAR TRANSISTOR PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features • • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching International Rectifier |
IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast International Rectifier |
IRG7PH35UPBF INSULATED GATE BIPOLAR TRANSISTOR PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight para International Rectifier |
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