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Datasheet IRG4PH40UD2 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 IRG4PH40UD2   Insulated Gate Bipolar Transistor

PD - 94739 IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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datasheet IRG4PH40UD2 pdf
3 IRG4PH40UD2-E   Insulated Gate Bipolar Transistor

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery an
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datasheet IRG4PH40UD2-E pdf
2 IRG4PH40UD2-EP   Insulated Gate Bipolar Transistor

PD - 95239 IRG4PH40UD2-EP • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits • Industry standard TO-247AD package with extended leads • Lead-Free
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datasheet IRG4PH40UD2-EP pdf
1 IRG4PH40UD2PBF   Insulated Gate Bipolar Transistor

PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency t
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datasheet IRG4PH40UD2PBF pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

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