IRG4PC30UPBF データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor」です。 |
検索結果を表示する |
部品番号 |
IRG4PC30UPBF INSULATED GATE BIPOLAR TRANSISTOR PD - 94923 IRG4PC30UPbF INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode International Rectifier |
文字列「 IRG4PC30 」「 4PC30UPBF 」で始まる検索結果です。 |
部品説明 |
IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation International Rectifier |
IRG4PC30FD INSULATED GATE BIPOLAR TRANSISTOR PD 91460B IRG4PC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution an International Rectifier |
IRG4PC30FDPBF INSULATED GATE BIPOLAR TRANSISTOR PD - 95556 IRG4PC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distrib International Rectifier |
IRG4PC30FPBF INSULATED GATE BIPOLAR TRANSISTOR PD -94920 IRG4PC30FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio International Rectifier |
IRG4PC30K INSULATED GATE BIPOLAR TRANSISTOR PD - 91588A IRG4PC30K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides ti International Rectifier |
IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR PD -91587A IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • T International Rectifier |
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