Datasheet IRG4PC30FPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRG4PC30FPBF	INSULATED GATE BIPOLAR TRANSISTOR PD -94920 IRG4PC30FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry stan	International Rectifier

IRG4PC30F Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRG4PC30FD	INSULATED GATE BIPOLAR TRANSISTOR PD 91460B IRG4PC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution an	International Rectifier
IRG4PC30F	INSULATED GATE BIPOLAR TRANSISTOR PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation	International Rectifier
IRG4PC30FPBF	INSULATED GATE BIPOLAR TRANSISTOR PD -94920 IRG4PC30FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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