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Datasheet IRG4IBC30S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRG4IBC30S | INSULATED GATE BIPOLAR TRANSISTOR PD - 94293
IRG4IBC30S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO |
 International Rectifier |
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| 1 | IRG4IBC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95637A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
• Industry standard TO-220 Full-P |
International Rectifier |
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