IRG4IBC30KD データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode」です。 |
検索結果を表示する |
部品番号 |
IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs International Rectifier |
文字列「 IRG4IBC30 」「 4IBC30KD 」で始まる検索結果です。 |
部品説明 |
IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Very Low 1.59V votage drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in har International Rectifier |
IRG4IBC30KDPBF INSULATED GATE BIPOLAR TRANSISTOR PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switching speed optimized for up to 25kHz with low VCE(on) Short Circuit Rating 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter di International Rectifier |
IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • International Rectifier |
IRG4IBC30SPBF INSULATED GATE BIPOLAR TRANSISTOR PD - 95637A INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry st International Rectifier |
IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonan International Rectifier |
IRG4IBC30UDPBF INSULATED GATE BIPOLAR TRANSISTOR PD- 95598A IRG4IBC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard International Rectifier |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |