IRG4BC40WSPBF データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor」です。 |
検索結果を表示する |
部品番号 |
IRG4BC40WSPBF INSULATED GATE BIPOLAR TRANSISTOR PD - 95788B INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40WSPbF IRG4BC40WLPbF C Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-b International Rectifier |
文字列「 IRG4BC40 」「 4BC40WSPBF 」で始まる検索結果です。 |
部品説明 |
IRG4BC40F HEXFET Power MOSFET PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio International Rectifier |
IRG4BC40FPBF HEXFET Power MOSFET PD - 95447 IRG4BC40FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio International Rectifier |
IRG4BC40K HEXFET Power MOSFET PD - 91592B IRG4BC40K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 International Rectifier |
IRG4BC40KPBF INSULATED GATE BIPOLAR TRANSISTOR PD -95174 IRG4BC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 International Rectifier |
IRG4BC40S HEXFET Power MOSFET PD - 91455B IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Indust International Rectifier |
IRG4BC40SPBF INSULATED GATE BIPOLAR TRANSISTOR PD - 95175 IRG4BC40SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Indu International Rectifier |
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