データシート PDF 検索 - DataSheet.jp

IRG4BC40WSPBF データシート PDF

この部品の機能は「Insulated Gate Bipolar Transistor」です。


検索結果を表示する

部品番号
IRG4BC40WSPBF

INSULATED GATE BIPOLAR TRANSISTOR


PD - 95788B INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40WSPbF IRG4BC40WLPbF C Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-b


International Rectifier
International Rectifier

データシート pdf



文字列「 IRG4BC40 」「 4BC40WSPBF 」で始まる検索結果です。

部品説明

IRG4BC40F

HEXFET Power MOSFET

PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio

International Rectifier
International Rectifier

 データシート pdf


IRG4BC40FPBF

HEXFET Power MOSFET

PD - 95447 IRG4BC40FPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio

International Rectifier
International Rectifier

 データシート pdf


IRG4BC40K

HEXFET Power MOSFET

PD - 91592B IRG4BC40K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3

International Rectifier
International Rectifier

 データシート pdf


IRG4BC40KPBF

INSULATED GATE BIPOLAR TRANSISTOR

PD -95174 IRG4BC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3

International Rectifier
International Rectifier

 データシート pdf


IRG4BC40S

HEXFET Power MOSFET

PD - 91455B IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Indust

International Rectifier
International Rectifier

 データシート pdf


IRG4BC40SPBF

INSULATED GATE BIPOLAR TRANSISTOR

PD - 95175 IRG4BC40SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Indu

International Rectifier
International Rectifier

 データシート pdf

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