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Datasheet IRG4BC40F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRG4BC40F | HEXFET Power MOSFET PD - 91454B
IRG4BC40F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry sta |
 International Rectifier |
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| 1 | IRG4BC40FPBF | HEXFET Power MOSFET PD - 95447
IRG4BC40FPbF
INSULATED GATE BIPOLAR TRANSISTOR Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry stan |
International Rectifier |
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