IRG4BC30UD データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor」です。 |
検索結果を表示する |
部品番号 |
IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR PD 91453B IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in reso International Rectifier |
文字列「 IRG4BC30 」「 4BC30UD 」で始まる検索結果です。 |
部品説明 |
IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR PD - 91450B IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio International Rectifier |
IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution a International Rectifier |
IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR PD - 96929 IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Fast CoPack IGBT VCES = 600V Features Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design pro International Rectifier |
IRG4BC30FD1 INSULATED GATE BIPOLAR TRANSISTOR PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Features Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distributio International Rectifier |
IRG4BC30FDPBF INSULATED GATE BIPOLAR TRANSISTOR PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter para International Rectifier |
IRG4BC30FPBF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR PD -95651 IRG4BC30FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation International Rectifier |
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