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Datasheet IRG4BC30KD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRG4BC30KD | 600V, 16A, INSULATED GATE BIPOLAR TRANSISTOR PD -91595A
IRG4BC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter dis |
 International Rectifier |
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| 2 | IRG4BC30KD-S | INSULATED GATE BIPOLAR TRANSISTOR PD -91594C
IRG4BC30KD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter d |
International Rectifier |
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| 1 | IRG4BC30KD-SPBF | HEXFET Power MOSFET PD -95674
IRG4BC30KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed tighter parameter di |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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