データシート PDF 検索 - DataSheet.jp

IRG4BC30FD-S データシート PDF

この部品の機能は「Insulated Gate Bipolar Transistor」です。


検索結果を表示する

部品番号
IRG4BC30FD-S

INSULATED GATE BIPOLAR TRANSISTOR


www.Datasheet.jp PD - 96929 IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Fast CoPack IGBT VCES = 600V Features • Fast: optimized for medium operating frequencies (1-5


International Rectifier
International Rectifier

データシート pdf



文字列「 IRG4BC30 」「 4BC30FD 」で始まる検索結果です。

部品説明

IRG4BC30F

INSULATED GATE BIPOLAR TRANSISTOR

PD - 91450B IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio

International Rectifier
International Rectifier

 データシート pdf


IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR

PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution a

International Rectifier
International Rectifier

 データシート pdf


IRG4BC30FD1

INSULATED GATE BIPOLAR TRANSISTOR

PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Features • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distributio

International Rectifier
International Rectifier

 データシート pdf


IRG4BC30FDPBF

INSULATED GATE BIPOLAR TRANSISTOR

PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter para

International Rectifier
International Rectifier

 データシート pdf


IRG4BC30FPBF

Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR

PD -95651 IRG4BC30FPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation

International Rectifier
International Rectifier

 データシート pdf


IRG4BC30K

INSULATED GATE BIPOLAR TRANSISTOR

PD - 91596A IRG4BC30K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides ti

International Rectifier
International Rectifier

 データシート pdf

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