IRG4BC20W-S データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor」です。 |
検索結果を表示する |
部品番号 |
IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching IRF |
文字列「 IRG4BC20 」「 4BC20W 」で始まる検索結果です。 |
部品説明 |
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio IRF |
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR PD 91601A IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution an IRF |
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR PD -91783A IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution IRF |
IRG4BC20FD-SPBF INSULATED GATE BIPOLAR TRANSISTOR PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter International Rectifier |
IRG4BC20FDPBF INSULATED GATEBIPOLAR TRANSISTOR PD - 94906 IRG4BC20FDPbF Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter pa International Rectifier |
IRG4BC20FPBF Fast Speed IGBT PD - 95742 IRG4BC20FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generatio International Rectifier |
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