IRG4BC10KDPBF データシート PDFこの部品の機能は「Hexfet Power Mosfet」です。 |
検索結果を表示する |
部品番号 |
IRG4BC10KDPBF HEXFET Power MOSFET PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast IGBT VCES = 600V • High short circuit rating optimized for mo International Rectifier |
文字列「 IRG4BC10 」「 4BC10KDPBF 」で始まる検索結果です。 |
部品説明 |
IRG4BC10K Short Circuit Rated UltraFast IGBT PD - 91733A IRG4BC10K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficien International Rectifier |
IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high International Rectifier |
IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR PD - 91786A IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR Features • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Ch International Rectifier |
IRG4BC10SD-L (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR PD - 94255 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drive International Rectifier |
IRG4BC10SD-LPBF INSULATED GATE BIPOLAR TRANSISTOR PD - 95780 IRG4BC10SD-SPbF IRG4BC10SD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, u International Rectifier |
IRG4BC10SD-S (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR PD - 94255 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drive International Rectifier |
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