IRFZ48NLPBF データシート PDFこの部品の機能は「Hexfet Power Mosfet」です。 |
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部品番号 |
IRFZ48NLPBF HEXFET Power MOSFET l l l l l l l Description Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFZ International Rectifier |
文字列「 IRFZ48 」「 48NLPBF 」で始まる検索結果です。 |
部品説明 |
IRFZ48 Power MOSFET ( Transistor ) IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 110 29 36 Single D FEATURES 60 0.018 • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Ultra Low On-Resis Vishay |
IRFZ48L Power MOSFET ( Transistor ) www.vishay.com IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 110 29 36 Single 0.018 D I2PAK (TO-262) D2PAK (TO-263) FEATURES • Advanced process tec Vishay |
IRFZ48N N-channel enhancement mode TrenchMOS transistor Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state NXP Semiconductors |
IRFZ48N Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico International Rectifier |
IRFZ48NL (IRFZ48NL / IRFZ48NS) Advanced Process Technology PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D IRFZ48NS IRFZ48NL VDSS = 55V RDS(on) = 0.014Ω Advanced HEX International Rectifier |
IRFZ48NPBF HEXFET Power MOSFET PD - 94991 IRFZ48NPbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 14mΩ G S ID = 64A De International Rectifier |
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