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Datasheet IRFZ48 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 21 | IRFZ48 | Power MOSFET ( Transistor ) IRFZ48, SiHFZ48
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 110 29 36 Single
D
FEATURES
60 0.018
• • • • • • • •
Dynamic dV/dt Rating Repetitive Avalanche Rated Ultra Low On-Resistance Very Low Therm |
 Vishay |
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| 20 | IRFZ48L | Power MOSFET ( Transistor ) www.vishay.com
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
110 29 36 Single
0.018
D
I2PAK (TO-262)
D2PAK (TO-263)
FEATURES
• Advanced process technology
• Surface |
Vishay |
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| 19 | IRFZ48N | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit |
 International Rectifier |
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| 18 | IRFZ48N | N-channel enhancement mode TrenchMOS transistor Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has i |
 NXP Semiconductors |
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| Número de pieza | Descripción | Fabricantes | |
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