IRFZ46NLPBF データシート PDFこの部品の機能は「Hexfet Power Mosfet」です。 |
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部品番号 |
IRFZ46NLPBF HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRFZ46NS International Rectifier |
文字列「 IRFZ46 」「 46NLPBF 」で始まる検索結果です。 |
部品説明 |
IRFZ46 Power MOSFET ( Transistor ) International Rectifier |
IRFZ46 HEXFET Power MOSFET IRFZ46 HEXFET ® Power MOSFET Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS=50V RDS(on)=0.024Ω ID=50 * A Description Third Generation HEXFETs from International Rectifier provide the designer with the best co ART CHIP |
IRFZ46 Trans MOSFET N-CH 50V 50A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor |
IRFZ46 Power MOSFET ( Transistor ) Power MOSFET IRFZ46, SiHFZ46 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 50 VGS = 10 V 66 21 25 Single 0.024 TO-220 D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature Vishay |
IRFZ46L Power MOSFET ( Transistor ) l Advanced Process Technology l Surface Mount (IRFZ46S) l Low-profile through-hole (IRFZ46L) l 175°C Operating Temperature l Fast Switching G Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re International Rectifier |
IRFZ46N Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex International Rectifier |
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