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Datasheet IRFZ44VZ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFZ44VZ | Power MOSFET ( Transistor ) PD - 94755
AUTOMOTIVE MOSFET
IRFZ44VZ IRFZ44VZS IRFZ44VZL
HEXFET® Power MOSFET
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Features
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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VDSS = 60V RDS(on) = 12mΩ
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Description
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 International Rectifier |
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| 3 | IRFZ44VZLPbF | Power MOSFET ( Transistor ) Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon |
International Rectifier |
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| 2 | IRFZ44VZPbF | Power MOSFET ( Transistor ) Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon |
International Rectifier |
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| 1 | IRFZ44VZSPbF | Power MOSFET ( Transistor ) Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon |
International Rectifier |
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