IRFZ40FI データシート PDFこの部品の機能は「N-channel Mosfet Transistor」です。 |
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部品番号 |
IRFZ40FI N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ40FI FEATURES ·Typical RDS(on) = 0.022 ·Avalanche Rugged Technology ·100% Avalanche Tested ·Low Gate Charge Inchange Semiconductor |
IRFZ40FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI VDSS 50 V 50 V R DS( on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A s TYPICAL RDS(on) = 0.022 Ω s AVALANCHE RUG STMicroelectronics |
文字列「 IRFZ40 」「 40FI 」で始まる検索結果です。 |
部品説明 |
IRFZ40 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ40 FEATURES ·Typical RDS(on) = 0.022 ·Avalanche Rugged Technology ·100% Avalanche Tested ·Low Gate Charge ·High Current Capability DESCRIPTION ·Designed for use in switch mode power suppl Inchange Semiconductor |
IRFZ40 (IRFZ42 / IRFZ40) N-Channel Enhancement Mode Power MOS Transistors ST Microelectronics |
IRFZ40 (IRFZ40 - IRFZ45) N-Channel Power MOSFETS Samsung Electronics |
IRFZ40 (IRFZ40 / IRFZ42) Power Field Effect Transistors Motorola Semiconductor |
IRFZ40 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI s s s s s s s V DSS 50 V 50 V R DS( on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o ST Microelectronics |
IRFZ40 Trans MOSFET N-CH 50V 35A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor |
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