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Datasheet IRFZ24NS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFZ24NS | Power MOSFET ( Transistor ) IRFZ24NS/NL
Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A
D
N Channel
G
S Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Value Min Typ
Drain to Source Breakdown Voltage Drain to Source Leakage Current
V(BR)DSS VGS = |
 TRANSYS |
 |
| 2 | IRFZ24NS | Power MOSFET ( Transistor )
PD - 9.1355B
IRFZ24NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.07Ω
G
ID = 17A
S
Description
Fif |
 International Rectifier |
|
| 1 | IRFZ24NSPBF | HEXFET Power MOSFET
PD - 95147
IRFZ24NS/LPbF
l l l l l l l
Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.07Ω
G
ID = 17A
S
De |
International Rectifier |
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