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Datasheet IRFZ24 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 23 | IRFZ24 | Power MOSFET ( Transistor ) |
 International Rectifier |
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| 22 | IRFZ24 | Power MOSFET ( Transistor ) Advanced Power MOSFET
IRFZ24
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.050 |
 Fairchild Semiconductor |
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| 21 | IRFZ24 | Power MOSFET ( Transistor ) Power MOSFET
IRFZ24, SiHFZ24
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
25 5.8 11 Single
D
0.10
TO-220AB
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating |
 Vishay |
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| 20 | IRFZ24A | ADVANCED POWER MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower R |
Fairchild Semiconductor |
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