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Datasheet IRFZ14 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | IRFZ14 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ. |
 Fairchild Semiconductor |
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| 8 | IRFZ14 | HEXFET Power MOSFET |
 International Rectifier |
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| 7 | IRFZ14 | (IRFZ10 / IRFZ14) N-Channel Power MOSFET
ww.DataSheet4U.com
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 Samsung Electronics |
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| 6 | IRFZ14 | Power MOSFET ( Transistor ) Power MOSFET
IRFZ14, SiHFZ14
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.1 5.8 Single
0.20
D
TO-220AB
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Ratin |
 Vishay |
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