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Datasheet IRFY430C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFY430C | N-Channel MOSFET
IRFY430C
Dimensions in mm (inches).
10.6 (0.42) 0.8 (0.03) 4.6 (0.18)
16.5 (0.65)
3.70 Dia. Nom
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.
1.5(0.53)
10.6 (0.42)
1 2 3
12.70 (0.50 min)
VDSS = 500V ID = 4.5A RDS(ON) = 1.5Ω
All Semelab hermetically s |
 Seme LAB |
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| 1 | IRFY430CM | POWER MOSFET N-CHANNEL Provisional Data Sheet No. PD 9.1291B
HEXFET® POWER MOSFET
IRFY430CM
N-CHANNEL
500 Volt, 1.5Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance c |
 International Rectifier |
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