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Datasheet IRFY130CM Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRFY130CM   POWER MOSFET N-CHANNE

Provisional Data Sheet No. PD 9.1286C HEXFET® POWER MOSFET IRFY130CM N-CHANNEL 100 Volt, 0.18 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance
International Rectifier
International Rectifier
datasheet IRFY130CM pdf

IRFY13 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFY130C

Power MOSFET ( Transistor )

PD - 91286D POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRFY130C IRFY130CM IRFY130C,IRFY130CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® R DS(on) 0.18 Ω 0.18 Ω ID 14.4A 14.4A Eyelets Ceramic Ceramic HEXFET® MOSFET technology is the key to Internation
International Rectifier
International Rectifier
datasheet pdf - International Rectifier
IRFY1310M-T257

N-CHANNEL POWER MOSFET

IRFY1310M-T257 MECHANICAL DATA Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDS ID(max) RDS(on) FEATURES 16.38 (0.645) 16.89 (0.665) 13.38 (0.5
Seme LAB
Seme LAB
datasheet pdf - Seme LAB
IRFY130CM

POWER MOSFET N-CHANNE

Provisional Data Sheet No. PD 9.1286C HEXFET® POWER MOSFET IRFY130CM N-CHANNEL 100 Volt, 0.18 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low
International Rectifier
International Rectifier
datasheet pdf - International Rectifier


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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