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Datasheet IRFY044 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFY044 | N-CHANNEL POWER MOSFET
IRFY044
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81
10.41 10.67
N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
VDSS ID(cont) RDS(on)
FEATURES
0.89 1.14
16.38 16.89
13.39 13.64
1 2 3
12.70 19.05
60V 20A 0.035Ω
10.41 10.92
2.54 BSC
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 Seme LAB |
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| 2 | IRFY044C | N-CHANNEL POWER MOSFET
IRFY044C
MECHANICAL DATA Dimensions in mm (inches)
10.41 10.67 4.70 5.00 0.70 0.90 3.56 Dia. 3.81
N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
VDSS ID(cont) RDS(on)
FEATURES
0.89 1.14
16.38 16.89
13.39 13.64
1 2 3
12.70 19.05
60V 20A 0.035Ω
10.41 10.92
• HERMET |
Seme LAB |
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| 1 | IRFY044CM | POWER MOSFET N-CHANNE Provisional Data Sheet No. PD 9.1285C
HEXFET® POWER MOSFET
IRFY044CM
N-CHANNEL
60 Volt, 0.040 Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance |
 International Rectifier |
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