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Datasheet IRFWZ14 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFWZ14 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFWZ14
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.09 |
 Fairchild Semiconductor |
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| 1 | IRFWZ14A | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFW/IZ14A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0 |
Fairchild Semiconductor |
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